to ? 92 1. emitter 2. collector 3. base jiangsu changjiang electron ics technology co., ltd to-92 plastic-encapsulate transistors 2SC380TM transistor (npn) features z high frequency amplifier applications maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 35 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 30 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 4 v collector cut-off current i cbo v cb =35v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a dc current gain h fe v ce =12v, i c =2ma 40 240 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 0.4 v base-emitter saturation voltage v be (sat) i c =10ma,i b =1ma 1 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 3.2 pf transition frequency f t v ce =10v,i c =1ma 100 mhz classification of h fe rank r o y range 40-80 70-140 120-240 symbol parameter value unit v cbo collector-base voltage 35 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 4 v i c collector current 50 ma p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 416 / w t j junction temperature 150 t stg storage temperature -55~+150 www.cj-elec.com 1 ' , ' h f ,2015
0.1 1 10 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 0.1 1 10 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 0.1 1 10 200 400 600 800 1000 0.1 1 10 10 100 1000 0.1 1 10 10 100 1000 024681 01 2 0 2 4 6 11 0 1000 capacitance c (pf) reverse voltage v (v) c ob c ib f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? 20 t a =1 0 0 t a =2 5 collcetor current i c (ma) base-emmiter voltage v be (v) i c v be common emitter v ce =12v collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a 50 base-emitter saturation voltage v besat (mv) collector current i c (ma) =10 t a =100 t a =25 i c v besat ?? 50 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? t a =100 t a =25 =10 50 7 dc current gain h fe collector current i c (ma) 50 common emitter v ce =12v t a =25 t a =100 i c h fe ?? 30ua 27ua 24ua 21ua 18ua 15ua 12ua 9ua 6ua i b =3ua collector current i c (ma) collector-emitter voltage v ce (v) common emitter t a =25 static characteristic 100 50 transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 i c ?? f t ?? www.cj-elec.com 2 ' , ' h f ,2015 typical characteristics
min m ax min max a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com 3 d,dec,2015
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 4 d,dec,2015
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